ISZ230N10NM6ATMA1 vs IPD068N10N3GATMA1 Comparison

Detailed side-by-side comparison of ISZ230N10NM6ATMA1 by Infineon and IPD068N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ230N10NM6ATMA1

ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISZ230N10NM6ATMA1 IPD068N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.71 $0.65
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (Ta) 7.7 A β€”
Continuous Drain Current (Tc) 31 A β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 48 W β€”
On-Resistance RDS(on) at VGS=10V 23 mΞ© (typ, ID=10A) β€”
Gate Threshold Voltage VGS(th) 3.3 V (typ at 13 Β΅A) 2.0 V to 4.0 V (typical)
Technology OptiMOS 6 trench MOSFET OptiMOS 3 (N-Channel, Enhancement Mode)
Package PG-TSDSON-8 FL (3.3 x 3.3 mm) PG-TO252-3 (DPAK, 2 leads + tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +150 Β°C (junction) β€”
Gate Drive Voltage (recommended) 10 V β€”
MSL Level MSL1 (per JEDEC J-STD-020) 1
RoHS Status Compliant Compliant
Family OptiMOS 6 (100V class) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc β€” 90 A
On-Resistance RDS(on) max β€” 6.8 mOhm
Power Dissipation (PD) at Tc β€” 150 W
Operating Junction Temperature β€” -55 C to +175 C
Channel Type β€” N-Channel
Configuration β€” Single
Packing β€” Tape & Reel (T/R)
Qualification β€” Industrial (non-automotive)

Datasheets & Resources

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