ISZ230N10NM6ATMA1 vs IPD068N10N3GATMA1 Perbandingan
Perbandingan bersamaan detil ISZ230N10NM6ATMA1 dari Infineon dan IPD068N10N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISZ230N10NM6ATMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | 2.0 V to 4.0 V (typical) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Paket | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Level MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |