ISZ230N10NM6ATMA1 vs IPD068N10N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ230N10NM6ATMA1 sa pamamagitan ng Infineon at IPD068N10N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD068N10N3GATMA1 - 100V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD068N10N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ230N10NM6ATMA1 | IPD068N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (Ta) | 7.7 A | — |
| Continuous Drain Current (Tc) | 31 A | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 48 W | — |
| On-Resistance RDS(on) at VGS=10V | 23 mΩ (typ, ID=10A) | — |
| Gate Threshold Voltage VGS(th) | 3.3 V (typ at 13 µA) | 2.0 V to 4.0 V (typical) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 3 (N-Channel, Enhancement Mode) |
| Packhaging | PG-TSDSON-8 FL (3.3 x 3.3 mm) | PG-TO252-3 (DPAK, 2 leads + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Family | OptiMOS 6 (100V class) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPD068N10N3GATMA1 |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) max | — | 6.8 mOhm |
| Power Dissipation (PD) at Tc | — | 150 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Channel Type | — | N-Channel |
| Configuration | — | Single |
| Packing | — | Tape & Reel (T/R) |
| Qualification | — | Industrial (non-automotive) |