K4A4G085WG-BCWE vs K4A4G085WE-BCRC Comparison
Detailed side-by-side comparison of K4A4G085WG-BCWE by Samsung Electronics and K4A4G085WE-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WG-BCWE | K4A4G085WE-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.68 | $1.36 |
| Memory Type | DDR4 SDRAM (Volatile) | DDR4 SDRAM |
| Memory Size | 4 Gb | — |
| Memory Organization | 512M x 8 | — |
| Data Rate | 3200 Mbps/pin | 2400 Mbps |
| Speed Class | DDR4-3200 | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Technology | D-die DDR4 | — |
| Package | FBGA-78 (BCW) | FBGA-78 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel (DDR4) | Parallel |
| Burst Length | BL8 | — |
| DLL Mode | DLL Enabled (per datasheet timing) | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | [DATA_NEEDED: refresh rate specification] | 8n / 1X refresh (per JEDEC DDR4) |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| Packaging | Tray | — |
| Density | — | 4 Gbit |
| Organization | — | 512M x 8 |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| MSL Level | — | [DATA_NEEDED: Moisture Sensitivity Level] |