K4A4G165WD-BCRC vs K4A4G165WD-BCTD Comparison
Detailed side-by-side comparison of K4A4G165WD-BCRC by Samsung Electronics and K4A4G165WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | K4A4G165WD-BCRC | K4A4G165WD-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.10 | $19.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Supply Voltage | 1.2 V | — |
| Package | FBGA-96 | 96-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount (BGA) |
| Process Generation | Samsung D-die | — |
| Interface Type | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | Yes (external RZQ resistor) |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C (commercial) |
| RoHS Status | Lead free / RoHS Compliant | [DATA_NEEDED: RoHS status] |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Data Rate | — | 2666 Mbps/pin (-BCTD speed grade) |
| Supply Voltage (VDD) | — | 1.2 V |
| Core Supply (VPP) | — | 2.5 V |
| Interface | — | SSTL-12 |
| Data Mask | — | Yes (DM per byte lane) |
| Bank Architecture | — | 16 banks / 4 bank groups |
| On-Die Termination | — | Dynamic ODT |
| CRC / CA Parity | — | CRC read/write support |
| Reset | — | Asynchronous reset (RESET_n) |