K4A4G165WG-BCWE vs MT40A256M16LY-062E Comparison
Detailed side-by-side comparison of K4A4G165WG-BCWE by Samsung Electronics and MT40A256M16LY-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G165WG-BCWE - 4Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A4G165WG-BCWE ✓ Active
Specification Comparison
| Parameter | K4A4G165WG-BCWE | MT40A256M16LY-062E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $16.90 | $5.30 |
| Memory Type | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Memory Size | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | — |
| Interface | Parallel | Parallel |
| Data Rate | 3200 Mbps | — |
| Access Time | 19 ns | — |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | — |
| Package | FBGA-96 | 96-FBGA (7.5 x 13.5 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Format | DRAM | — |
| Technology | DDR4 | — |
| Product Status | Active | — |
| RoHS Status | Compliant (per JLCPCB listing) | Compliant (F = RoHS/lead-free finish) |
| Clock Frequency | [DATA_NEEDED: clock frequency / tCK range] | 1.6 GHz |
| CAS Latency | [DATA_NEEDED: CAS latency] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval] | — |
| Organization | — | 256M x16 |
| Access Time (tAA) | — | 19 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| Data Rate Class | — | DDR4-2666 (062E speed grade) |
| Operating Temperature (IT variant) | — | -40C to +95C |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Write Leveling | — | Yes |
| CRC (Command/Address) | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| FBGA Code | — | D9XSG (AUT variant) |