MT40A256M16LY-062E - 4Gb DDR4 SDRAM x16 | Micron
MPN: MT40A256M16LY-062E β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.44 | $7.44 |
| 10 | $6.85 | $68.50 |
| 100 | $6.2 | $620.00 |
| 500 | $5.75 | $2,875.00 |
| 1,000 | $5.3 | $5,300.00 |
Drop-in alternatives for MT40A256M16LY-062E β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT40A256M16LY-062E IT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16LY-062E AUT:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16LY-062E:F
β Drop-Inπ Reference alternative (not in catalog)
K4A4G165WG-BCWE
β Drop-Inβ In Stock
$16.9 / Unit
View Datasheet βNT5AD512M16C4-JRU
β Drop-Inβ In Stock
$83 / Unit
View Datasheet βMT40A256M16LY-062E Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Memory Size | 4 Gbit |
| Organization | 256M x16 |
| Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Access Time (tAA) | 19 ns |
| Supply Voltage (VDD) | 1.2 V |
| Data Rate Class | DDR4-2666 (062E speed grade) |
| Package | 96-FBGA (7.5 x 13.5 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature (IT variant) | -40C to +95C |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Write Leveling | Yes |
| CRC (Command/Address) | Yes |
| Data Mask (DM) | Yes |
| Dynamic On-Chip Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| FBGA Code | D9XSG (AUT variant) |
| RoHS Status | Compliant (F = RoHS/lead-free finish) |
MT40A256M16LY-062E 96-fbga (7.5 x 13.5 mm) Pin Configuration Guide
Complete pinout information for MT40A256M16LY-062E (96-fbga (7.5 x 13.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT40A256M16LY-062E.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A256M16LY-062E is suitable for 6 applications: Embedded Processor Main Memory, Industrial Controllers and HMI, Automotive Infotainment and Telematics, Networking and Communication Equipment, Test and Measurement Instruments, Server and Storage Systems.
Embedded Processor Main Memory
The MT40A256M16LY-062E is widely used as the primary volatile memory for embedded ARM and x86 SoCs that expose a 16-bit DDR4 memory controller. The x16 organization matches single-chip memory designs where a 32-bit or 64-bit bus is not needed, saving board space and controller pins. At DDR4-2666 class timing (19 ns tAA, 1.6 GHz clock), a single x16 device delivers roughly 4.25 GB/s of peak read/write bandwidth. Auto self-refresh and auto precharge offload memory management from low-power applications, and the 1.2V supply reduces power versus DDR3L solutions. Layout requires the standard fly-by CA topology with on-chip termination and ZQ calibration to keep signal integrity at speed.
Recommended
Industrial Controllers and HMI
The IT temperature variant (MT40A256M16LY-062E IT:F), rated -40C to +95C, targets factory automation, PLCs, and human-machine interfaces that operate in unconditioned cabinets. DDR4's CRC on the command/address bus catches CA bus corruption from electrical noise typical of motor drives and switching loads, while dynamic ODT adapts termination as the bus load changes during read/write turnaround. The 4Gb density comfortably hosts Linux-based control stacks with headroom for logging buffers. Designers should validate the full refresh interval at the highest operating temperature, since refresh requirements tighten above 85C, and confirm the IT-grade self-refresh data retention figures from the Micron datasheet before committing the design.
Recommended
Automotive Infotainment and Telematics
The MT40A256M16LY-062E AUT:F automotive-grade variant serves telematics control units, digital cockpits, and infotainment head units. Automotive DDR4 from Micron is qualified for the extended -40C to +95C ambient range and withstands the vibration and thermal cycling of vehicle environments; the 96-FBGA solder-ball package provides mechanical robustness on conformally coated boards. Infotainment graphics stacks benefit from the 4.25 GB/s peak bandwidth of the 16-bit DDR4-2666 class interface, typically configured two or four devices deep for 32/64-bit buses. Note the AAT:F automotive suffix has been moved to Micron's obsolete catalog, so new automotive platforms should baseline the AUT:F and verify lifecycle status at design freeze.
Recommended
Networking and Communication Equipment
Switches, routers, and 5G small-cell equipment use the MT40A256M16LY-062E for packet buffers, flow tables, and control-plane memory. The bank-group architecture of DDR4 interleaves activate and precharge across groups, sustaining higher effective bandwidth during random-access patterns typical of packet processing. Data mask (UDM/LDM) lets network processors write variable-length packets without read-modify-write overhead, and CRC-protected CA signaling improves reliability in electrically noisy rack environments. The 4Gb x16 device is commonly depopulated in pairs to scale memory width, and its standard 96-FBGA footprint allows pin-compatible second sourcing to Samsung K4A4G165WG-BCWE for supply-chain resilience, subject to memory-controller timing table updates.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators require large acquisition buffers with deterministic access, making DDR4 SDRAM a natural fit. The MT40A256M16LY-062E provides 4Gbit of capture memory in a single 96-FBGA device; multiple devices on a 32- or 64-bit bus aggregate both density and bandwidth for deep-memory waveform capture at high sample rates. ZQ calibration maintains accurate output impedance over the instrument's temperature range, preserving signal integrity on long DQ flights. Designers should budget termination power at 1.2V VDDQ and follow Micron's routing guidelines for length-matched strobe-to-data pairs. The industrial IT:F grade suits bench instruments whose internal temperatures exceed commercial limits.
Recommended
Server and Storage Systems
Entry-level servers, NAS controllers, and SSDs use 4Gb x16 DDR4 devices like the MT40A256M16LY-062E for controller DRAM: caching metadata, mapping tables, and buffering host I/O. SSD controllers frequently select the x16 organization because their memory controllers are 16- or 32-bit wide, and 4Gb provides sufficient map memory for multi-terabyte NAND arrays when paired appropriately. The 1.2V operation reduces the always-on power budget of standby RAID and NAS appliances. Designers of storage systems should implement periodic scrubbing of the DRAM, since these parts typically do not include on-die ECC in this family, and verify thermal conditions inside dense drive enclosures against the +95C industrial limit.
Recommended
Recommended Products Summary
Engineering reference data for MT40A256M16LY-062E β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A256M16LY-062E IT:F | MT40A256M16LY-062E AUT:F | K4A4G165WG-BCWE | NT5AD512M16C4-JRU |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5 x 13.5 mm) | 96-FBGA (7.5 x 13.5 mm) - same | 96-FBGA (7.5 x 13.5 mm) - same | 96-FBGA (7.5 x 13.5 mm) - same | 96-FBGA - same family |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung | Nanya Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x16 | 256M x16 | 256M x16 | 256M x16 | 512M x16 |
| Speed Grade | 062E (DDR4-2666 class, 19 ns) | 062E - same | 062E - same | DDR4-2666 class (BCWE bin) | DDR4-2666 class (JRU bin) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C (commercial base) / extended per suffix | -40C to +95C | -40C to +95C (automotive) | 0C to +85C (commercial) | 0C to +85C (commercial) |
| Qualification Grade | Commercial / industrial per suffix | Industrial (IT) | Automotive (AUT) | Commercial | Commercial |
| Price (Qty 1) | $7.44 (as of 2026-09-02) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industrial and automotive temperature options on the same die (vs K4A4G165WG-BCWE)
- Full DDR4 feature set including CRC and dynamic ODT (vs NT5AD512M16C4-JRU)
- Lower operating voltage than DDR3L predecessor (vs MT41K128M16JT-125)
Design Notes
Use fly-by topology for the command/address bus with a single termination point per rank, and length-match DQ to its strobe within the window specified in the Micron DDR4 datasheet (typically a few mils per inch tolerance). At DDR4-2666 class speeds the differential strobes (UDQS/UDQS#, LDQS/LDQS#) set the sampling window, so route each DQ byte lane as a tightly matched group. Enable write leveling during bring-up; the MT40A256M16LY-062E supports it natively to compensate board skew on writes.
The device runs from 1.2V VDD and VDDQ. Estimated: at DDR4-2666 with ODT enabled, per-device current is typically in the hundreds of milliamps range; size the core rail regulator and decoupling network (bulk 100 uF plus distributed 0.1 uF/0.01 uF ceramics at each power ball) for the peak active-read case in the Micron datasheet current tables, not the standby figure. Separate VDDQ planes from VDD and add a ZQ reference resistor (240 ohm, 1 percent) close to the ZQ ball.
Confirm the temperature suffix matches your environment: the commercial :F is not rated for -40C to +95C; specify IT:F or AUT:F. Also note the AAT:F automotive variant appears in Micron's obsolete catalog, so legacy BOMs referencing it must migrate to AUT:F. Refresh timing tightens above 85C per DDR4 JEDEC conventions - verify your controller's refresh rate setting against the highest expected die temperature, and never reuse DDR3L controller timing tables on DDR4.
Compliance Information
The :F suffix denotes RoHS-compliant, lead-free finish per Micron part-number conventions and distributor listings. Formal REACH, halogen-free, and conflict-minerals declarations must be obtained from Micron; not present in the provided web data.
