K4A8G085WB-BCWE vs H5AN4G8NBJR-UHI Comparison
Detailed side-by-side comparison of K4A8G085WB-BCWE by Samsung Electronics and H5AN4G8NBJR-UHI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.30 | $2.25 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| Organization | 1G x 8 | 512M x 8 |
| Data Rate | 3200 Mbps | 2400 MT/s |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Die Classification | B-die | — |
| Interface | DDR4 (SSTL12) | JEDEC DDR4 SDRAM |
| Application Domain | Server, industrial control, networking, embedded systems | — |
| VREF AC-Noise Derating | +/-1% of VDD included in timing deratings | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Package Body Size | [DATA_NEEDED: package dimensions in mm] | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Refresh | — | Self-refresh and auto-refresh support |
| Termination | — | On-die termination (ODT) |
| CAS Latency | — | [DATA_NEEDED: CAS latency at DDR4-2400] |