SK hynix

H5AN4G8NBJR-UHI - 4Gb DDR4-2400 SDRAM | SK hynix

MPN: H5AN4G8NBJR-UHI ✓ Active
In Stock Ships in 1-3 business days
1.2 V Vdss FBGA-78 (78-ball fine-pitch BGA) Package DDR4-2400 (PC4-19200) Speed DDR4 SDRAM Memory
From $2.25 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $3.2 $3.20
10 $2.95 $29.50
100 $2.7 $270.00
500 $2.45 $1,225.00
1,000 $2.25 $2,250.00
ℹ️ All prices are in USD

Drop-in alternatives for H5AN4G8NBJR-UHI — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN4G8NBJR-UHC

✅ Drop-In
SK hynix
📦 FBGA-78
DDR4 SDRAM · 4 Gbit · 512M x 8 · 2400 Mbps (PC2400) · 1.2 V · DDR4 (JEDEC) · TFBGA-78 (11 x 7.5 mm) · Surface Mount

✓ In Stock

$3.18 / Unit

View Datasheet →

H5AN4G8NBJR-RDC

✅ Drop-In
SK hynix
📦 FBGA-78
DDR4 SDRAM · 4 Gbit · 512M x 8 · DDR4 (Double Data Rate IV) · 78-ball FBGA · Surface Mount · [DATA_NEEDED: VDD supply voltage] · [DATA_NEEDED: speed grade Mbps]

✓ In Stock

$2.95 / Unit

View Datasheet →

H5AN4G8NBJR-PBC

✅ Drop-In
SK hynix
📦 FBGA-78
4 Gbit · 512M x 8 · DDR4 SDRAM · Parallel, JEDEC DDR4 · 1.2 V · 1.2 V · PBC · [DATA_NEEDED: Clock Frequency]

✓ In Stock

$2.2 / Unit

View Datasheet →

MT40A512M8RH-083E

✅ Drop-In
Micron Technology
📦 FBGA-78
DDR4 SDRAM · 4 Gbit · 512M x 8 · DDR4-2400 · 1.2 GHz · 8 banks (2 groups of 4) · 8n-bit · 64 ms, 8192-cycle refresh (to 95C)

✓ In Stock

$3.3 / Unit

View Datasheet →

K4A8G085WC-BCWE

✅ Drop-In
Samsung Electronics
📦 FBGA-78
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps (DDR4-3200) · 1.2 V · 0C to +85C · 78FBGA · Surface Mount

✓ In Stock

Contact for price

View Datasheet →

K4A8G085WB-BCWE

✅ Drop-In
Samsung Electronics
📦 FBGA-78
DDR4 SDRAM · 8 Gb · 1G x 8 · 3200 Mbps · 1.2 V · 0C to +85C · 78-ball FBGA · Surface Mount

✓ In Stock

$4.28 / Unit

View Datasheet →

H5AN4G8NBJR-UHI Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 4 Gbit
Organization 512M x 8
Speed Grade DDR4-2400 (PC4-19200)
Supply Voltage (VDD) 1.2 V
Package FBGA-78 (78-ball fine-pitch BGA)
Mounting Type Surface Mount
Grade Industrial (-UHI suffix)
Data Rate 2400 MT/s
Interface JEDEC DDR4 SDRAM
Bank Architecture DDR4 bank group architecture
Refresh Self-refresh and auto-refresh support
Termination On-die termination (ODT)

H5AN4G8NBJR-UHI fbga-78 (78-ball fine-pitch bga) Pin Configuration Guide

Complete pinout information for H5AN4G8NBJR-UHI (fbga-78 (78-ball fine-pitch bga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-78 (78-ball fine-pitch bga) package pinout diagram for H5AN4G8NBJR-UHI

No detailed pinout data available for H5AN4G8NBJR-UHI.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for H5AN4G8NBJR-UHI Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN4G8NBJR-UHI is suitable for 6 applications: Industrial Control Main Memory, Networking Equipment Buffer Memory, Embedded Compute Modules (COM Express / SMARC), Test and Measurement Instrumentation, Surveillance and Vision Systems, Automotive-Adjacent and Rugged Embedded Systems.

🏭

Industrial Control Main Memory

The H5AN4G8NBJR-UHI is purpose-built for industrial-control main memory because the -UHI industrial temperature grade withstands the wide ambient conditions found in factory automation cabinets, motor-control enclosures, and PLC platforms. Its 4Gb 512M x 8 organization provides ample buffer space for real-time control data at DDR4-2400 bandwidth (PC4-19200 class), while the 1.2 V rail keeps memory-subsystem power low enough for passively cooled industrial systems. Deployed as discrete DRAM on a CPU or SoC board with fly-by address routing and on-die termination, it delivers deterministic bandwidth for motion profiles and logging workloads. Self-refresh mode preserves state through low-power standby, and the FBGA-78 footprint enables second-sourcing with Micron or Samsung equivalents without PCB rework.

🌐

Networking Equipment Buffer Memory

Line cards, switches, and routers rely on large, fast DRAM pools for packet buffering, queue management, and table lookups, and the H5AN4G8NBJR-UHI fits this role with DDR4-2400 data-rate operation and a 4Gb density in a single x8 die. The x8 organization allows granular ECC strategies at the controller level, important for long-duty-cycle networking hardware where uncorrected bit errors degrade uptime. The 1.2 V supply and DDR4 power-down modes reduce per-port power, a critical metric in high-port-count equipment. Because the FBGA-78 package is the industry-standard DDR4 footprint, network OEMs can dual-source with SK hynix suffix variants or Micron MT40A512M8RH-083E to mitigate allocation risk, an increasingly common practice in telecom supply chains.

🖥️

Embedded Compute Modules (COM Express / SMARC)

Computer-on-module carriers for COM Express and SMARC standards frequently specify discrete DDR4 components soldered directly on the module, and the H5AN4G8NBJR-UHI provides 4Gb of DDR4-2400 bandwidth per chip with the industrial reliability the -UHI grade implies. Four x8 devices aggregate into a 64-bit bus with 8 GB of memory, matching typical embedded CPU memory controllers, while 1.2 V operation keeps module thermal design feasible in fanless enclosures. The FBGA-78 land pattern is shared across SK hynix, Micron, and Samsung x8 DDR4 parts, letting module vendors qualify multiple sources on one PCB. Self-refresh supports memory retention across S3/suspend states, and DDR4 ODT simplifies signal integrity on high-layer-count module stackups.

🔧

Test and Measurement Instrumentation

Oscilloscopes, logic analyzers, and signal generators require deep capture memory with sustained bandwidth, and the H5AN4G8NBJR-UHI supplies 4Gb per device at DDR4-2400, enabling multi-gigabyte acquisition buffers in benchtop instruments. The x8 organization supports straightforward 72-bit ECC memory controllers (64 data plus 8 check devices), preserving measurement integrity during long captures. The industrial -UHI grade tolerates instrument-internal temperature rise above ambient, which is common in densely packed acquisition hardware. Its 1.2 V supply eases power-supply design in instruments already constrained by analog rail noise concerns, and the standard FBGA-78 footprint allows vendors to swap in Samsung K4A8G085WC-BCWE or Micron equivalents during component shortages without redesign.

🎥

Surveillance and Vision Systems

Network video recorders and smart-camera platforms stream multiple high-resolution video channels through DRAM before write-out to storage, making 4Gb DDR4 components like the H5AN4G8NBJR-UHI a natural fit. The DDR4-2400 data rate sustains the multi-stream aggregate bandwidth of 4K camera pipelines, while 512M x 8 organization supports ECC-protected buffering that prevents visual artifacts from sporadic bit errors in always-on recording systems. The industrial -UHI grade suits outdoor NVR enclosures subject to wide temperature swings, and the 1.2 V rail helps keep passively cooled surveillance hardware within its thermal budget. Using the standard FBGA-78 footprint, security OEMs can alternate between SK hynix, Micron MT40A512M8RH-083E, and Samsung parts to stabilize supply across project volumes.

🚗

Automotive-Adjacent and Rugged Embedded Systems

Rugged embedded controllers used in telematics gateways, off-highway equipment, and transport infrastructure require memory that survives vibration, thermal cycling, and wide ambient ranges; the FBGA-78 solder-ball mounting of the H5AN4G8NBJR-UHI plus its industrial -UHI grade address these mechanical and thermal demands. The 4Gb density supports map caching, protocol stacks, and data logging at DDR4-2400 bandwidth, while bank-group architecture keeps effective throughput high under the mixed read/write patterns typical of gateway workloads. At 1.2 V, the DRAM contributes minimally to the power budget of battery-backed and ignition-switched systems. The shared DDR4 footprint enables dual-sourcing with Micron and Samsung x8 parts, protecting long-lifecycle rugged programs from single-vendor allocation.

What is the H5AN4G8NBJR-UHI?
The H5AN4G8NBJR-UHI is a SK hynix 4Gb DDR4 SDRAM organized as 512M x 8, rated for DDR4-2400 operation at 1.2 V in a 78-ball FBGA package. According to the SK hynix H5AN4GxNBJR series datasheet, the family targets main-memory applications requiring large memory density and high bandwidth, and the -UHI suffix denotes the industrial temperature grade.
Where can I buy H5AN4G8NBJR-UHI online?
The H5AN4G8NBJR-UHI is available through independent distributors and sourcing platforms listed in web data, including Win Source, Jotrin Electronics, YIC Electronics, NX Electronics (Nextron), and netCOMPONENTS. Most of these suppliers operate on RFQ (request-for-quote) terms for industrial DDR4. XAIPART also supports quote-based ordering for this MPN; contact sales for current stock, lead time, and pricing as of 2026-09-04.
What is the price of H5AN4G8NBJR-UHI?
Published pricing for the H5AN4G8NBJR-UHI is primarily RFQ-based; sibling part H5AN4G8NBJR-UHC has been listed by brokers with prices starting around a few tenths of a US dollar at high volume, while the industrial -UHI grade typically carries a premium. The tier table on this page reflects estimated market pricing as of 2026-09-04 and should be confirmed with an official quote before purchase commitments.
What is the difference between H5AN4G8NBJR-UHI and H5AN4G8NBJR-UHC?
Both parts are 4Gb DDR4 SDRAMs in the same 78-ball FBGA package with identical organization and die; the difference is the temperature grade. The -UHI suffix is the industrial-temperature option, while -UHC is the commercial/consumer grade. Per the same-brand drop-in policy, the -UHC can substitute the -UHI only in designs whose ambient conditions stay within commercial limits - for industrial environments, choose the -UHI.
Is H5AN4G8NBJR-UHI the same as H5AN4G8NBJR-RDC or -PBC?
No - they share the same 4Gb 512M x 8 DDR4 die and FBGA-78 footprint but differ in speed grade and temperature grade encoded by the suffix. The -RDC and -PBC variants run at different data rates than the DDR4-2400 -UHI. They are pin-to-pin drop-in options only when your memory controller supports the corresponding speed and the operating environment matches the grade, so verify suffix definitions in the SK hynix datasheet ordering-information table.
What is the best Micron equivalent for H5AN4G8NBJR-UHI?
The closest Micron cross-brand equivalent is the MT40A512M8RH-083E, a 4Gb DDR4 SDRAM with the same 512M x 8 organization in the industry-standard 78-ball FBGA footprint, running at DDR4-2666 (which is backward-compatible when the controller runs at 2400 MT/s). Samsung K4A8G085WC-BCWE and K4A8G085WB-BCWE are also same-footprint x8 4Gb DDR4 alternatives. Always validate SPD/configuration and speed-bin compatibility on the target platform before swapping.
Can MT40A512M8RH-083E replace H5AN4G8NBJR-UHI?
Yes, in most DDR4-2400 designs the Micron MT40A512M8RH-083E is a functionally compatible drop-in: same 4Gb density, same 512M x 8 organization, same 1.2 V supply, and the industry-standard FBGA-78 footprint. Its -083E bin is DDR4-2666, so it comfortably meets 2400 MT/s timing. However, DDR4 module down-selection should still verify speed-bin tables, refresh behavior, and any firmware/SPD assumptions in your BIOS or memory controller.
When should I choose H5AN4G8NBJR-UHI over a Samsung K4A8G085WC-BCWE?
Choose the H5AN4G8NBJR-UHI when your design was validated against SK hynix DDR4 components, when the industrial temperature grade is required, or when supply-chain diversification calls for a second-source with proven industrial qualification. Choose the Samsung K4A8G085WC-BCWE when its speed bin and commercial/industrial grade better match your platform, or when SK hynix lead times are long. Both share the FBGA-78 footprint, so either can occupy the same PCB land pattern.
Where can I download the H5AN4G8NBJR-UHI datasheet PDF?
The H5AN4G8NBJR series datasheet is available through distributor mirrors such as the Digi-Key-hosted PDF (media.digikey.com, file H5AN4GxNBJR Series.pdf) and datasheet aggregators DigChip and Alldatasheet. SK hynix distributes DDR4 component datasheets under its Consumer DRAM documentation set; the Rev1.7 (2018-03-20) consumer DDR4 document covers the H5AN4G8NBJR family including the -UHI industrial option.
What package does H5AN4G8NBJR-UHI use?
The H5AN4G8NBJR-UHI comes in a 78-ball FBGA (fine-pitch ball grid array) surface-mount package, the industry-standard footprint for discrete DDR4 components. This footprint is shared across SK hynix, Micron, and Samsung 4Gb DDR4 x8 devices, which is why cross-brand drop-in alternatives such as MT40A512M8RH-083E and K4A8G085WC-BCWE physically fit the same PCB land pattern without rework.
What supply voltage does H5AN4G8NBJR-UHI require?
The H5AN4G8NBJR-UHI operates from a 1.2 V DDR4 supply, per the DDR4 JEDEC architecture. Board designs must also generate VPP (approximately 2.5 V) for the word-line boost and provide proper VTT termination at half of VDD. Compared with DDR3 at 1.5 V, the 1.2 V rail reduces memory-subsystem power noticeably, which is a key reason DDR4 became the mainstream main-memory standard.
Is H5AN4G8NBJR-UHI suitable for industrial applications?
Yes - the -UHI suffix specifically denotes the industrial temperature option of the H5AN4G8NBJR consumer/industrial DDR4 family, making it intended for industrial-control main memory, networking equipment, and embedded compute modules exposed to wider ambient conditions. For consumer-only environments, the lower-cost -UHC grade with the same die and package may suffice, but industrial deployments should specify the -UHI.
Is H5AN4G8NBJR-UHI RoHS compliant and lead-free?
Compliance status for the -UHI suffix is not explicitly stated in the sourced web snippets, so it should be verified against the official SK hynix environmental report for the H5AN4G8NBJR family before compliance-critical deployment. SK hynix consumer DDR4 devices of this generation are generally produced as lead-free, halogen-free products, but confirm via the manufacturer certificate of analysis or the distributor RoHS documentation rather than assuming.
What are the key specifications of H5AN4G8NBJR-UHI that engineers should know?
Engineers should know five headline facts: it is a 4 Gbit DDR4 SDRAM organized 512M x 8; it runs at the DDR4-2400 speed grade (2400 MT/s); it uses a 1.2 V supply per the DDR4 standard; it is housed in the standard 78-ball FBGA package; and the -UHI suffix indicates the industrial temperature grade. Together these define bandwidth (PC4-19200 class), power, footprint, and environmental envelope for a main-memory design.
Hey Google, what can replace H5AN4G8NBJR-UHI?
Direct drop-in replacements include same-brand SK hynix suffix variants (H5AN4G8NBJR-UHC, -RDC, -PBC - same package, different grade/speed) and cross-brand parts with the same FBGA-78 footprint and x8 organization: Micron MT40A512M8RH-083E (DDR4-2666) and Samsung K4A8G085WC-BCWE or K4A8G085WB-BCWE. All are 4Gb DDR4 SDRAMs; confirm speed-bin, temperature grade, and SPD compatibility with your memory controller before substituting.
What is the lead time for H5AN4G8NBJR-UHI?
Lead time for H5AN4G8NBJR-UHI is not published in the verified web data; industrial DDR4 is typically sourced via RFQ through distributors such as Win Source, Jotrin, YIC Electronics, and netCOMPONENTS members, where lead times can range from stock to several weeks depending on broker inventory. Request a quote on this page to receive a current lead-time commitment as of 2026-09-04 rather than relying on generic estimates.

Engineering reference data for H5AN4G8NBJR-UHI — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5AN4G8NBJR-UHI when you need 4Gb DDR4-2400 main memory with an explicitly industrial temperature grade in the industry-standard FBGA-78 footprint - typical for industrial control, networking line cards, and rugged embedded modules. Choose the same-brand H5AN4G8NBJR-UHC if your environment is consumer/controlled and cost matters most; it is die-identical but not industrial-rated. Choose H5AN4G8NBJR-RDC or -PBC only when a slower speed bin is acceptable and you can re-run memory training. Choose Micron MT40A512M8RH-083E when you want DDR4-2666 headroom or a franchised-distributor second source. Choose Samsung K4A8G085WC-BCWE or K4A8G085WB-BCWE when Samsung supply or platform qualification favors it. All options share the same land pattern; the decisive trade-offs are temperature grade, speed bin, and sourcing channel rather than footprint or density.

Comparison with Alternatives

Parameter This Product H5AN4G8NBJR-UHC H5AN4G8NBJR-RDC MT40A512M8RH-083E K4A8G085WC-BCWE
Package FBGA-78 FBGA-78 - same FBGA-78 - same FBGA-78 - same FBGA-78 - same
Brand SK hynix SK hynix SK hynix Micron Technology Samsung
Density 4 Gbit 4 Gbit 4 Gbit 4 Gbit 4 Gbit
Organization 512M x 8 512M x 8 512M x 8 512M x 8 512M x 8
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Speed Grade DDR4-2400 [DATA_NEEDED] [DATA_NEEDED] DDR4-2666 [DATA_NEEDED]
Temperature Grade Industrial (-UHI) Commercial (-UHC) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Sourcing Model RFQ / distributor quote RFQ / broker stock RFQ Franchise distributor Franchise distributor

Key Differentiators

  • Industrial temperature grade (vs H5AN4G8NBJR-UHC)
  • Standard footprint with broad cross-brand second sourcing (vs MT40A512M8RH-083E)
  • Speed-bin flexibility within the same die (vs H5AN4G8NBJR-PBC)

Design Notes

DDR4-2400 routing requires length matching within the controller specification, typically tight matching of DQ/DM/DQS per byte lane and looser but bounded skew on address/command for the fly-by topology. Use on-die termination (ODT) settings from the SK hynix datasheet and write-leveling to close timing at 2400 MT/s. Keep data groups on inner layers with solid reference planes, and avoid splitting the DQ reference plane under escape routing. Validate with eye-diagram tests on the DQS strobe before production sign-off.

Provide three rails: 1.2 V VDD, approximately 2.5 V VPP, and VTT at VDD/2 with a termination regulator capable of sinking and sourcing current. Estimated: a single x8 DDR4 device draws on the order of hundreds of milliwatts at DDR4-2400, so a 4-device 32-bit bus plus VTT needs a multi-amp rail design; size the VTT LDO or switcher with a bulk capacitance of at least 100 uF plus local 0.1 uF ceramics per ball-cluster. Follow the controller vendor power tree, e.g., TI or Renesas DDR power reference designs.

Do not assume speed-grade interchange without controller validation: swapping the -UHI (DDR4-2400) for a slower -PBC suffix can fail boot at programmed CAS latency, while faster bins like Micron MT40A512M8RH-083E (DDR4-2666) generally down-clock safely but must still pass memory training. Also, -UHC commercial-grade parts must not replace -UHI in industrial thermal environments even though they are die-identical. Always re-run memory training and margining after any suffix or brand substitution.

FBGA-78 escape routing uses via-in-pad or dog-bone fan-out; prefer 0.8 mm pitch-compatible via-in-pad with filled vias for signal integrity at 2400 MT/s. Reserve the layer stack for a minimum of one dedicated ground reference under each data group. Add thermal relief consistent with JEDEC-style solder-ball reflow profiles for BGA packages, and define the footprint land pattern per the manufacturer package drawing rather than copying from another vendor to avoid ball-map mismatch on second sources.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

Compliance status not stated in sourced web data. Obtain the official SK hynix environmental report for the H5AN4G8NBJR family for RoHS/REACH/halogen-free confirmation.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

SK hynix H5AN4G8NBJR-UHI H5AN4G8NBJR-UHC H5AN4G8NBJR-RDC MT40A512M8RH-083E Micron Technology K4A8G085WC-BCWE Samsung DDR4 SDRAM DRAM DDR4-2400 512M x 8 FBGA-78 BGA JEDEC DDR4 industrial temperature grade on-die termination self-refresh main memory industrial control networking equipment COM Express ECC memory
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