K4A8G085WB-BCWE vs H5AN4G8NBJR-UHI Vergleich
Detaillierter Direktvergleich von K4A8G085WB-BCWE von Samsung Electronics und H5AN4G8NBJR-UHI von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K4A8G085WB-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| Marke | Samsung Electronics | SK hynix |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $12,30 | $2,25 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| Speicherorganisation | 1G x 8 | 512M x 8 |
| Datenrate | 3200 Mbps | 2400 MT/s |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Betriebstemperatur | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Montageart | Surface Mount | Surface Mount |
| Die Classification | B-die | — |
| Schnittstelle | DDR4 (SSTL12) | JEDEC DDR4 SDRAM |
| Application Domain | Server, industrial control, networking, embedded systems | — |
| VREF AC-Noise Derating | +/-1% of VDD included in timing deratings | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Package Body Size | [DATA_NEEDED: package dimensions in mm] | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Refresh | — | Self-refresh and auto-refresh support |
| Termination | — | On-die termination (ODT) |
| CAS-Latenz | — | [DATA_NEEDED: CAS latency at DDR4-2400] |