K4A8G085WB-BCWE vs H5AN4G8NBJR-UHI 对比
详细并排对比 K4A8G085WB-BCWE 出自 Samsung Electronics 和 H5AN4G8NBJR-UHI 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G085WB-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.30 | $2.25 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| 存储组织 | 1G x 8 | 512M x 8 |
| 数据速率 | 3200 Mbps | 2400 MT/s |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| 工作温度 | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| 封装 | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| 安装类型 | Surface Mount | Surface Mount |
| Die Classification | B-die | — |
| 接口 | DDR4 (SSTL12) | JEDEC DDR4 SDRAM |
| Application Domain | Server, industrial control, networking, embedded systems | — |
| VREF AC-Noise Derating | +/-1% of VDD included in timing deratings | — |
| RoHS 状态 | [DATA_NEEDED: RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Package Body Size | [DATA_NEEDED: package dimensions in mm] | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Refresh | — | Self-refresh and auto-refresh support |
| Termination | — | On-die termination (ODT) |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency at DDR4-2400] |