K4A8G085WB-BICR vs K4A8G085WB-BIRC Comparison

Detailed side-by-side comparison of K4A8G085WB-BICR by Samsung Electronics and K4A8G085WB-BIRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BICR

K4A8G085WB-BICR - Samsung 8Gb DDR4 1Gx8 2400Mbps Industrial

K4A8G085WB-BICR βœ“ Active
Samsung Electronics
K4A8G085WB-BIRC

K4A8G085WB-BIRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung

K4A8G085WB-BIRC βœ“ Active

Specification Comparison

Parameter K4A8G085WB-BICR K4A8G085WB-BIRC
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.25 $4.15
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 1G x 8 1G x 8
Data Rate 2400 Mbps 2400 Mbps
Supply Voltage 1.2 V (VDD/VDDQ) 1.2 V
Number of Banks 16 β€”
Refresh Cycles 8192 8192
Package 78-ball FBGA 78-FBGA
Pin Count 78 β€”
Mounting Type Surface Mount Surface Mount
Temperature Grade Industrial (I-grade) β€”
Operating Temperature Range [DATA_NEEDED: exact temperature range for BICR industrial suffix] β€”
Die / Process Samsung 8Gb B-die DDR4 β€”
Speed Grade DDR4-2400 (PC4-19200) β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Refresh Management Row refresh, auto-refresh and self-refresh supported β€”
Operating Temperature β€” -40Β°C to 95Β°C
Number of Terminals β€” 78
Die Family β€” B-die
CAS Latency β€” [DATA_NEEDED: CAS Latency]
Burst Length β€” 8, 16
Interface β€” SSTL-12
RoHS β€” Compliant

Datasheets & Resources

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