K4A8G085WB-BIWE vs K4A8G085WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and K4A8G085WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WB-BIWE | K4A8G085WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Data Rate | 3200 Mbps | 2400 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to +85°C | 0°C to 85°C |
| Package | 78-FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | 0.175 ns |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Density | — | 8 Gb |
| Organization | — | 1G x 8 |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| RoHS | — | Compliant |