K4A8G085WB-BIWE vs K4A8G085WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BIWE disebabkan oleh Samsung Electronics dan K4A8G085WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WB-BIWE | K4A8G085WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Kadar Data | 3200 Mbps | 2400 Mbps |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Suhu Operasi | 0°C to +85°C | 0°C to 85°C |
| Kemasan | 78-FBGA | 78-ball FBGA |
| Jenis Pemasangan | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | 0.175 ns |
| Latensi CAS | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Density | — | 8 Gb |
| Organisasi | — | 1G x 8 |
| Number of Terminals | — | 78 |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS |
| Burst Length | — | 8 and 4 |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| RoHS | — | Compliant |