K4A8G085WB-BIWE vs MT40A1G8SA-075:E Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and MT40A1G8SA-075:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BIWE | MT40A1G8SA-075:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $6.30 |
| Memory Type | DDR4 SDRAM | SDRAM - DDR4 |
| Memory Size | 8 Gb | 8Gbit (1G x 8) |
| Memory Organization | 1G x 8 | — |
| Data Rate | 3200 Mbps | 2666 MT/s |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0°C to +85°C | — |
| Package | 78-FBGA | 78-FBGA (7.5x11 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| Operating Temperature Range | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Write Leveling | — | Supported |
| Dynamic On-Chip Termination | — | Supported |
| CRC Function | — | Supported |
| Data Mask Function | — | Supported |