K4A8G085WC-BCTD vs K4A8G085WC Comparison
Detailed side-by-side comparison of K4A8G085WC-BCTD by Samsung Electronics and K4A8G085WC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ Last Time BuySamsung Electronics
K4A8G085WC - 8Gb DDR4 SDRAM 1Gx8 2666Mbps | Samsung Electronics
K4A8G085WC ✓ ActiveSpecification Comparison
| Parameter | K4A8G085WC-BCTD | K4A8G085WC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Last Time Buy | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $50.85 | $24.90 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 2666 Mbps (PC4-2133) | — |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| Package | 78-ball FBGA (78FBGA) | 78-ball FBGA (78FBGA) |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | 0C to +95C | — |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Interface Type | Synchronous, parallel | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Speed | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage | — | 1.2 V |
| Supply Voltage Range | — | 1.14 V to 1.26 V |
| Clock Frequency | — | 1333 MHz (1333.333 GHz nominal, per web data) |
| Operating Temperature (K4A8G085WC-BITD) | — | -40 C to +95 C |
| Operating Temperature (K4A8G085WC-BCTD) | — | 0 C to +95 C |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| Data Mask (DM) | — | Yes |