K4A8G085WC-BCWE vs K4A8G085WC-BIWE Comparison
Detailed side-by-side comparison of K4A8G085WC-BCWE by Samsung Electronics and K4A8G085WC-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BCWE | K4A8G085WC-BIWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.38 | $6.29 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | 0C to +85C | — |
| Package | 78FBGA | 78-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | POD-12 |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| RoHS Status | Compliant (per JLCPCB listing) | Compliant |
| Refresh | Standard DDR4 refresh mechanisms | Auto-refresh, self-refresh |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Operating Temperature Range | — | -40°C to +95°C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 (CL22) |
| Lead-Free | — | Yes |