K4A8G165WB-BCRC vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of K4A8G165WB-BCRC by Samsung Electronics and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC ✓ Active
Specification Comparison
| Parameter | K4A8G165WB-BCRC | H5AN8G6NDJR |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $12.57 | $35.00 |
| Memory Type | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Memory Size | 8 Gb (1 GB) | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | 2400 Mbps (PC4-19200) | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Technology | CMOS DRAM, Samsung 8Gb B-die | — |
| Package | 96-ball FBGA (PBGA96) | 96-ball FBGA (13mm x 7.5mm) |
| Ball Pitch | 0.8 mm | — |
| Mounting Type | Surface Mount | — |
| Operating Temperature | -40C to +95C | — |
| Interface | DDR4 (Double Data Rate, synchronous) | — |
| On-Die Termination | Yes (ODT with dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| CRC / CA Parity | Yes (CRC function) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| RoHS Status | Compliant | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |