K4A8G165WB-BCRC vs H5AN8G6NDJR 对比
详细并排对比 K4A8G165WB-BCRC 出自 Samsung Electronics 和 H5AN8G6NDJR 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCRC | H5AN8G6NDJR |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $12.57 | $35.00 |
| 存储器类型 | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| 存储容量 | 8 Gb (1 GB) | — |
| Memory Organization | 512M x 16 | — |
| 数据速率 | 2400 Mbps (PC4-19200) | 3200 Mbps (DDR4-3200) |
| 电源电压 | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Technology | CMOS DRAM, Samsung 8Gb B-die | — |
| 封装 | 96-ball FBGA (PBGA96) | 96-ball FBGA (13mm x 7.5mm) |
| Ball Pitch | 0.8 mm | — |
| 安装类型 | Surface Mount | — |
| 工作温度 | -40C to +95C | — |
| 接口 | DDR4 (Double Data Rate, synchronous) | — |
| On-Die Termination | Yes (ODT with dynamic ODT) | — |
| ZQ Calibration | Yes | — |
| CRC / CA Parity | Yes (CRC function) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| RoHS 状态 | Compliant | — |
| Density | — | 8 Gb |
| 存储组织 | — | 512M x 16 |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS 延迟 | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| 特性 | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |