K4A8G165WB-BCTD vs K4A8G165WC-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WB-BCTD by Samsung Electronics and K4A8G165WC-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCTD | K4A8G165WC-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $37.00 | $1.31 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Organization | 512M x 16 | — |
| Total Density | 8 Gb | — |
| Data Rate | 2666 Mbps/pin (PC4-2666) | DDR4-2133 (2133 Mbps/pin) |
| Supply Voltage | 1.2 V | 1.2 V |
| Package | 96-ball FBGA | 96-ball FBGA (TFBGA) |
| Operating Temperature | 0°C to +95°C (TC) | 0C to +95C |
| CAS Latency | [DATA_NEEDED: CL value] | — |
| tRCD | [DATA_NEEDED: tRCD value] | — |
| tRP | [DATA_NEEDED: tRP value] | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Interface | — | DDR4 (16-bit data bus) |
| Die Generation | — | C-die (1Y nm class) |
| Mounting Type | — | Surface Mount |
| Features | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| MSL Level | — | [DATA_NEEDED: MSL Level] |
| RoHS Status | — | Compliant |
| Standard | — | JEDEC DDR4 SDRAM |