K4A8G165WG-BCWE vs MT40A512M16JY-083E Comparison
Detailed side-by-side comparison of K4A8G165WG-BCWE by Samsung Electro-Mechanics and MT40A512M16JY-083E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ ActiveMicron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WG-BCWE | MT40A512M16JY-083E |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Micron Technology |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $29.53 | $5.85 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (Automotive) |
| Memory Size | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps | 2400 MT/s (speed grade -083E) |
| Supply Voltage | 1.2 V | — |
| Operating Temperature Range | 0°C to +85°C | — |
| Operating Current | 20 mA | — |
| Package | FBGA-96 | 96-FBGA (8 x 14 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Row Cycle Time (tRC) | 19 ns | — |
| Technology | B-die | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Lifecycle Status | Active | — |
| Density | — | 8 Gbit |
| Organization | — | 512M x 16 |
| Clock Frequency | — | 1.2 GHz (tCK = 0.83 ns) |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| I/O Interface | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal adjustable generation |
| Refresh Structure | — | 8192-cycle refresh |
| Refresh Window | — | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| ECCN | — | EAR99 |
| Halogen Free | — | Compliant |
| Country of Origin | — | China |