K4A8G165WG-BCWE vs MT40A512M16JY-083E 对比
详细并排对比 K4A8G165WG-BCWE 出自 Samsung Electro-Mechanics 和 MT40A512M16JY-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electro-Mechanics
K4A8G165WG-BCWE - 8Gb DDR4 SDRAM x16 3200Mbps | Samsung
K4A8G165WG-BCWE ✓ 量产中Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ 量产中规格对比
| 参数 | K4A8G165WG-BCWE | MT40A512M16JY-083E |
|---|---|---|
| 品牌 | Samsung Electro-Mechanics | Micron Technology |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $29.53 | $5.85 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM (Automotive) |
| 存储容量 | 8 Gbit | — |
| Memory Organization | 512M x 16 | — |
| 数据速率 | 3200 Mbps | 2400 MT/s (speed grade -083E) |
| 电源电压 | 1.2 V | — |
| 工作温度范围 | 0°C to +85°C | — |
| Operating Current | 20 mA | — |
| 封装 | FBGA-96 | 96-FBGA (8 x 14 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Interface | Parallel | — |
| Row Cycle Time (tRC) | 19 ns | — |
| Technology | B-die | — |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| 生命周期状态 | Active | — |
| Density | — | 8 Gbit |
| 存储组织 | — | 512M x 16 |
| Clock Frequency | — | 1.2 GHz (tCK = 0.83 ns) |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| I/O Interface | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal adjustable generation |
| Refresh Structure | — | 8192-cycle refresh |
| Refresh Window | — | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| ECCN | — | EAR99 |
| 无卤 | — | Compliant |
| Country of Origin | — | China |