K4AAG085WM-BCTD vs K4AAG085WM-BCRC Comparison
Detailed side-by-side comparison of K4AAG085WM-BCTD by Samsung Electronics and K4AAG085WM-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG085WM-BCTD | K4AAG085WM-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.95 | $1.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 16 Gb | — |
| Organization | 2G x 8 | x8 |
| Speed Grade | DDR4-2666 | — |
| Supply Voltage | 1.2 V | — |
| Package | FBGA-78 | 78-ball FBGA |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Interface Type | Parallel (DDR4) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Clock Rate | 1333 MHz | — |
| Data Rate | 2666 MT/s | — |
| Bank Group Architecture | DDR4 bank groups | — |
| Density Class | 16 Gbit monolithic DRAM | — |
| Application Class | Industrial / embedded memory | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Density | — | [DATA_NEEDED: exact density in Gb] |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Max Data Rate | — | Up to 3200 Mbps/pin (family max per Samsung DDR4 page) |
| Interface | — | SSTL12 |
| Architecture | — | Bank-group DDR4 |
| Termination | — | On-Die Termination (ODT) |
| CAS Latency | — | [DATA_NEEDED: CL of -BCRC speed grade] |
| Clock | — | Differential clock CK/CK# |