K4AAG085WM-BCTD vs K4AAG085WM-BCRC 对比

详细并排对比 K4AAG085WM-BCTD 出自 Samsung Electronics 和 K4AAG085WM-BCRC 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K4AAG085WM-BCTD K4AAG085WM-BCTD - 16Gb DDR4-2666 SDRAM, 1.2V | Samsung

K4AAG085WM-BCTD - 16Gb DDR4-2666 SDRAM, 1.2V | Samsung

K4AAG085WM-BCTD ✓ 量产中
Samsung Electronics
K4AAG085WM-BCRC K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC - 32Gb DDR4 SDRAM x8 1.2V | Samsung

K4AAG085WM-BCRC ✓ 量产中

规格对比

参数 K4AAG085WM-BCTD K4AAG085WM-BCRC
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.95 $1.00
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 16 Gb —
存储组织 2G x 8 x8
Speed Grade DDR4-2666 —
电源电压 1.2 V —
封装 FBGA-78 78-ball FBGA
工作温度 0C to +85C [DATA_NEEDED: operating temperature range]
接口类型 Parallel (DDR4) —
安装类型 Surface Mount Surface Mount
Clock Rate 1333 MHz —
数据速率 2666 MT/s —
Bank Group Architecture DDR4 bank groups —
Density Class 16 Gbit monolithic DRAM —
Application Class Industrial / embedded memory —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
MSL 等级 [DATA_NEEDED: moisture sensitivity level] [DATA_NEEDED: moisture sensitivity level]
Density — [DATA_NEEDED: exact density in Gb]
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Max Data Rate — Up to 3200 Mbps/pin (family max per Samsung DDR4 page)
接口 — SSTL12
Architecture — Bank-group DDR4
Termination — On-Die Termination (ODT)
CAS 延迟 — [DATA_NEEDED: CL of -BCRC speed grade]
Clock — Differential clock CK/CK#

数据手册与资源

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