K4AAG165WA-BCWE vs K4AAG165WM-BCTD Comparison
Detailed side-by-side comparison of K4AAG165WA-BCWE by Samsung Electronics and K4AAG165WM-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG165WA-BCWE | K4AAG165WM-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $62.40 | $62.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| Data Rate | 3200 Mbps (DDR4-3200) | — |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Package | 96-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| Operating Temperature | -40C to +95C | 0C to +85C |
| Interface Type | Parallel, DDR4 | — |
| Mounting Type | Surface Mount | Surface Mount (BGA solder reflow) |
| Memory Format | DRAM (Volatile) | — |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | — |
| RoHS Status | Compliant | RoHS (per LCSC listing) |
| Packaging | Tray | — |
| Product Status | Active | — |
| Density | — | 16 Gb |
| Organization | — | 1G x 16 |
| Speed | — | 2666 Mbps |
| Interface | — | SSTL-12 |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask | — | Yes |