K4AAG165WA-BCWE vs K4AAG165WM-BCTD 对比
详细并排对比 K4AAG165WA-BCWE 出自 Samsung Electronics 和 K4AAG165WM-BCTD 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4AAG165WA-BCWE | K4AAG165WM-BCTD |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $62.40 | $62.00 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 16 Gb (2 GB) | — |
| Memory Organization | 1G x 16 | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | — |
| 电源电压 | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| 封装 | 96-ball FBGA | 96FBGA (96-ball Fine-Pitch Ball Grid Array) |
| Package Dimensions | 13 x 9 mm | — |
| Ball Pitch | 0.8 mm | — |
| 工作温度 | -40C to +95C | 0C to +85C |
| 接口类型 | Parallel, DDR4 | — |
| 安装类型 | Surface Mount | Surface Mount (BGA solder reflow) |
| Memory Format | DRAM (Volatile) | — |
| Technology | DDR4 SDRAM, 8n prefetch, bank group architecture | — |
| RoHS 状态 | Compliant | RoHS (per LCSC listing) |
| Packaging | Tray | — |
| Product Status | Active | — |
| Density | — | 16 Gb |
| 存储组织 | — | 1G x 16 |
| Speed | — | 2666 Mbps |
| 接口 | — | SSTL-12 |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| Data Mask | — | Yes |