K4AAG165WM-BCTD vs K4AAG165WA-BCWE Comparison
Detailed side-by-side comparison of K4AAG165WM-BCTD by Samsung Electronics and K4AAG165WA-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4AAG165WM-BCTD | K4AAG165WA-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $62.00 | $62.40 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | — |
| Organization | 1G x 16 | — |
| Speed | 2666 Mbps | — |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Operating Temperature | 0C to +85C | -40C to +95C |
| Package | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA |
| Interface | SSTL-12 | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| Mounting Type | Surface Mount (BGA solder reflow) | Surface Mount |
| RoHS Status | RoHS (per LCSC listing) | Compliant |
| Memory Size | — | 16 Gb (2 GB) |
| Memory Organization | — | 1G x 16 |
| Data Rate | — | 3200 Mbps (DDR4-3200) |
| Package Dimensions | — | 13 x 9 mm |
| Ball Pitch | — | 0.8 mm |
| Interface Type | — | Parallel, DDR4 |
| Memory Format | — | DRAM (Volatile) |
| Technology | — | DDR4 SDRAM, 8n prefetch, bank group architecture |
| Packaging | — | Tray |
| Product Status | — | Active |