K4B4G1646 vs K4B4G1646E-BCNB Comparison
Detailed side-by-side comparison of K4B4G1646 by Samsung Electronics and K4B4G1646E-BCNB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646 | K4B4G1646E-BCNB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.96 | $13.52 |
| Memory Type | DDR3 SDRAM | DDR3 SDRAM |
| Memory Size | 4 Gbit | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Interface | Parallel | — |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| Supply Voltage | 1.5 V (DDR3L variants 1.35 V) | 1.35 V (1.283 V to 1.45 V) |
| Package | 96-FBGA | 96-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | 0C to +95C |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Data Rate | — | 1866 Mbps |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Number of Pins | — | 96 |
| Interface Type | — | Parallel |
| Refresh | — | 8K / 64 ms |
| Burst Length | — | 8, 4 (fixed) |
| Write Recovery Time | — | [DATA_NEEDED: tWR] |
| Row Cycle Time | — | [DATA_NEEDED: tRC] |
| Row Address Strobe to Column Address Strobe Delay | — | [DATA_NEEDED: tRCD] |
| Row Precharge Time | — | [DATA_NEEDED: tRP] |
| Active to Precharge Time | — | [DATA_NEEDED: tRAS] |