K4B4G1646 vs K4B4G1646E-BCNB 对比
详细并排对比 K4B4G1646 出自 Samsung Electronics 和 K4B4G1646E-BCNB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646 | K4B4G1646E-BCNB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $11.96 | $13.52 |
| 存储器类型 | DDR3 SDRAM | DDR3 SDRAM |
| 存储容量 | 4 Gbit | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 接口 | Parallel | — |
| Max Data Rate | Up to 2133 Mbps (grade dependent) | — |
| Clock Frequency Range | 800 MHz to 2133 Mbps (grade dependent) | — |
| 电源电压 | 1.5 V (DDR3L variants 1.35 V) | 1.35 V (1.283 V to 1.45 V) |
| 封装 | 96-FBGA | 96-ball FBGA |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +95C | 0C to +95C |
| On-Chip Termination (ODT) | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Die Revisions | B-die, D-die, Q-die (DDR3L) | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 数据速率 | — | 1866 Mbps |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| 引脚数 | — | 96 |
| 接口类型 | — | Parallel |
| Refresh | — | 8K / 64 ms |
| Burst Length | — | 8, 4 (fixed) |
| Write Recovery Time | — | [DATA_NEEDED: tWR] |
| Row Cycle Time | — | [DATA_NEEDED: tRC] |
| Row Address Strobe to Column Address Strobe Delay | — | [DATA_NEEDED: tRCD] |
| Row Precharge Time | — | [DATA_NEEDED: tRP] |
| Active to Precharge Time | — | [DATA_NEEDED: tRAS] |