K4B4G1646D-BFMA vs MT41K256M16HA-125 Comparison

Detailed side-by-side comparison of K4B4G1646D-BFMA by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646D-BFMA K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung

K4B4G1646D-BFMA - 4Gb DDR3 SDRAM x16 96FBGA | Samsung

K4B4G1646D-BFMA ✓ Active
Micron Technology
MT41K256M16HA-125 MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 ✓ Active

Specification Comparison

Parameter K4B4G1646D-BFMA MT41K256M16HA-125
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) — $6.36
Memory Type DDR3 SDRAM SDRAM - DDR3L
Density 4Gb —
Organization 256M x 16 —
Data Rate 1866 Mbps —
Supply Voltage 1.5V 1.35 V
Package 96-ball FBGA 96-FBGA (9x14 mm)
Ball Pitch 0.8mm —
Number of Banks 8 —
Burst Length 8 and 4 (with burst chop) —
CAS Latency Programmable 11
On-Die Termination Yes —
Temperature Range 0°C to 95°C (case) —
RoHS Compliant —
Lead-Free Yes Yes
Halogen Free Yes —
Memory Size — 4Gbit (256M x 16)
Data Bus Width — 16 bit
Clock Frequency — 800 MHz
Access Time — 13.75 ns
Number of Pins — 96
Mounting Type — Surface Mount
Operating Temperature — [DATA_NEEDED: operating temperature range]
RoHS Status — Compliant
Logic Family — CMOS
Refresh Interval — 7.8 us at 85C

Datasheets & Resources

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