K4B4G1646D-BHMA vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646D-BHMA by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BHMA | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organization | 256M x 16 | — |
| Data Rate | 1866 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35V (backward compatible to 1.5V) |
| Package | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Operating Temperature | -40°C to +95°C (TC) | 0°C ~ 95°C |
| CAS Latency | 13 (at 1866 Mbps) | — |
| Burst Length | 8 and 4 | — |
| Number of Terminals | 96 | 96 |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Refresh Mode | Auto and Self Refresh | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Interface | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Mounting Type | — | Surface Mount |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| RoHS Status | — | Compliant |