K4B4G1646D-BHMA vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646D-BHMA by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BHMA
K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646D-BHMA β ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL β ActiveSpecification Comparison
| Parameter | K4B4G1646D-BHMA | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.90 | $5.60 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | β |
| Organization | 256M x 16 | β |
| Data Rate | 1866 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35V (backward compatible to 1.5V) |
| Package | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Operating Temperature | -40Β°C to +95Β°C (TC) | 0Β°C ~ 95Β°C |
| CAS Latency | 13 (at 1866 Mbps) | β |
| Burst Length | 8 and 4 | β |
| Number of Terminals | 96 | 96 |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Die Version | D-die | β |
| Refresh Mode | Auto and Self Refresh | β |
| Memory Size | β | 4Gbit (256M x 16) |
| Interface | β | Parallel |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 20 ns |
| Mounting Type | β | Surface Mount |
| Memory Format | β | DRAM |
| Technology | β | SDRAM - DDR3L |
| RoHS Status | β | Compliant |