K4B4G1646D-BHMA vs IS43TR16256AL-125KBL Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BHMA disebabkan oleh Samsung Electronics dan IS43TR16256AL-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646D-BHMA | IS43TR16256AL-125KBL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Kadar Data | 1866 Mbps | 1600 Mbps |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | 1.35V (backward compatible to 1.5V) |
| Kemasan | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Suhu Operasi | -40°C to +95°C (TC) | 0°C ~ 95°C |
| Latensi CAS | 13 (at 1866 Mbps) | — |
| Burst Length | 8 and 4 | — |
| Number of Terminals | 96 | 96 |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Refresh Mode | Auto and Self Refresh | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Antaramuka | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Jenis Pemasangan | — | Surface Mount |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Status RoHS | — | Compliant |