K4B4G1646D-BHMA vs IS43TR16256AL-125KBL Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BHMA sa pamamagitan ng Samsung Electronics at IS43TR16256AL-125KBL sa pamamagitan ng ISSI, Integrated Silicon Solution Inc. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BHMA | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | — |
| Rate ng Data | 1866 Mbps | 1600 Mbps |
| Volte ng Pagbibigay | 1.35 V (1.283 V to 1.45 V) | 1.35V (backward compatible to 1.5V) |
| Packhaging | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Temperature na Operasyon | -40°C to +95°C (TC) | 0°C ~ 95°C |
| Latensya ng CAS | 13 (at 1866 Mbps) | — |
| Burst Length | 8 and 4 | — |
| Number of Terminals | 96 | 96 |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Die Version | D-die | — |
| Refresh Mode | Auto and Self Refresh | — |
| Laki ng Memory | — | 4Gbit (256M x 16) |
| Interface | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Uri ng Pagpapasok | — | Surface Mount |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Tindminan RoHS | — | Compliant |