K4B4G1646D-BMK0 vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4B4G1646D-BMK0 by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BMK0 - 4Gb DDR3L SDRAM 256Mx16 1600Mbps | Samsung
K4B4G1646D-BMK0 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BMK0 | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $6.36 |
| Density | 4 Gb | — |
| Organization | 256M x 16 | — |
| Speed Grade | 1600 Mbps (PC3L-12800) | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to 95°C | [DATA_NEEDED: operating temperature range] |
| Package | 96FBGA (TFBGA) | 96-FBGA (9x14 mm) |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Die Version | D-die | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Number of Functions | 1 | — |
| Data Rate | 1600 Mbps | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Data Bus Width | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| Supply Voltage | — | 1.35 V |
| Number of Pins | — | 96 |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | Compliant |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |
| CAS Latency | — | 11 |