K4B4G1646D-BYH9 vs K4B4G1646D-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BYH9 by Samsung Electronics and K4B4G1646D-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ Active
Specification Comparison
| Parameter | K4B4G1646D-BYH9 | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Density | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1333 Mbps | 1600 Mbps (PC3-12800) |
| Supply Voltage | 1.35 V | 1.35 V (1.5 V compatible) |
| Operating Temperature | 0 ~ 85 °C | 0°C to 85°C |
| Package | 96FBGA | 96-ball FBGA |
| Number of Banks | 8 | — |
| CAS Latency | Programmable | Programmable (e.g., 11, 10, 9) |
| Write Latency | Programmable | — |
| On-Die Termination | Yes | Yes |
| Internal Calibration | Yes | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | Yes |
| Die Version | D-die | — |
| Memory Type | — | DDR3L SDRAM |
| Burst Length | — | 8 (with burst chop 4) |
| Number of Pins | — | 96 |
| Die Revision | — | D-die |