K4B4G1646D-BYMA0 vs K4B4G1646E-BYMATCV Comparison
Detailed side-by-side comparison of K4B4G1646D-BYMA0 by Samsung Electronics and K4B4G1646E-BYMATCV by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ ActiveSamsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYMA0 | K4B4G1646E-BYMATCV |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $7.50 | $5.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | — |
| Total Memory Size | 4 Gb | — |
| Supply Voltage | 1.35 V | 1.35 V |
| Data Rate | 1866 Mbps (PC3-14900) | 1866 Mbps |
| Package | 96-ball FBGA | 96-ball FBGA |
| Operating Temperature Range | 0°C to +85°C | -40°C to +95°C |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Precharge | Supported | Yes |
| Asynchronous Reset | Supported | — |
| ZQ Calibration | Supported | — |
| Data Mask | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| Memory Size | — | 4 Gbit (256M x 16) |
| I/O Voltage (VDDQ) | — | 1.35 V |
| Number of Pins | — | 96 |
| Number of Banks | — | 8 |
| Burst Length | — | 8 (with burst chop 4) |
| CAS Latency | — | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | — | Yes |
| Self-Refresh | — | Yes |
| RoHS Status | — | Compliant |