K4B4G1646D-BYMA0 vs K4B4G1646E-BYMATCV 对比
详细并排对比 K4B4G1646D-BYMA0 出自 Samsung Electronics 和 K4B4G1646E-BYMATCV 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646D-BYMA0 | K4B4G1646E-BYMATCV |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $7.50 | $5.90 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| 存储组织 | 256M x 16 | — |
| Total Memory Size | 4 Gb | — |
| 电源电压 | 1.35 V | 1.35 V |
| 数据速率 | 1866 Mbps (PC3-14900) | 1866 Mbps |
| 封装 | 96-ball FBGA | 96-ball FBGA |
| 工作温度范围 | 0°C to +85°C | -40°C to +95°C |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| RoHS Compliant | Yes | — |
| Auto Precharge | Supported | Yes |
| Asynchronous Reset | Supported | — |
| ZQ Calibration | Supported | — |
| Data Mask | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| 存储容量 | — | 4 Gbit (256M x 16) |
| I/O Voltage (VDDQ) | — | 1.35 V |
| 引脚数 | — | 96 |
| Number of Banks | — | 8 |
| Burst Length | — | 8 (with burst chop 4) |
| CAS 延迟 | — | Programmable (e.g., 13, 12, 11) |
| On-Die Termination (ODT) | — | Yes |
| Self-Refresh | — | Yes |
| RoHS 状态 | — | Compliant |