K4B4G1646E-BMMA vs K4B4G1646E-BMK0 Comparison
Detailed side-by-side comparison of K4B4G1646E-BMMA by Samsung Electronics and K4B4G1646E-BMK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BMMA | K4B4G1646E-BMK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $16.08 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35 V | — |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C |
| Package | 96-FBGA (9x13 mm) | 96-FBGA |
| Number of Banks | 8 | — |
| Interface | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes (Dynamic ODT) | — |
| ZQ Calibration | Yes | Yes |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Speed Grade | — | 1600 Mbps |
| Voltage | — | 1.35 V |
| Mounting Type | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |