K4B4G1646E-BMMA vs K4B4G1646E-BMK0 对比
详细并排对比 K4B4G1646E-BMMA 出自 Samsung Electronics 和 K4B4G1646E-BMK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4B4G1646E-BMMA | K4B4G1646E-BMK0 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $16.08 | $6.50 |
| 存储器类型 | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 数据速率 | 1600 Mbps | 1600 Mbps |
| 电源电压 | 1.35 V | — |
| 工作温度 | -40°C to +95°C | -40°C to +95°C |
| 封装 | 96-FBGA (9x13 mm) | 96-FBGA |
| Number of Banks | 8 | — |
| 接口 | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| CAS 延迟 | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 4 (with burst chop) | — |
| On-Die Termination | Yes (Dynamic ODT) | — |
| ZQ Calibration | Yes | Yes |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Speed Grade | — | 1600 Mbps |
| Voltage | — | 1.35 V |
| 安装类型 | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic ODT | — | Yes |
| Data Mask | — | Yes |