K4B4G1646E-BYK0 vs K4B4G1646E-BCNB Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK0 by Samsung Electronics and K4B4G1646E-BCNB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK0
K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK0 β ActiveSamsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYK0 | K4B4G1646E-BCNB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.80 | $13.52 |
| Memory Type | DDR3L SDRAM | DDR3 SDRAM |
| Density | 4 Gb | β |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.35 V (1.283 V to 1.45 V) |
| Data Rate | DDR3-1600 (800 MHz) | 1866 Mbps |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA |
| Operating Temperature | 0Β°C to +95Β°C (TC) | 0C to +95C |
| CAS Latency | 11 (CL-tRCD-tRP) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8 (fixed), 4 (burst chop) | 8, 4 (fixed) |
| On-Die Termination | Yes (dynamic ODT) | β |
| ZQ Calibration | Yes | β |
| Auto Precharge | Yes | β |
| Self-Refresh | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| RoHS | Compliant | β |
| Memory Size | β | 4 Gb |
| Mounting Type | β | Surface Mount |
| RoHS Status | β | Compliant |
| Number of Pins | β | 96 |
| Interface Type | β | Parallel |
| Refresh | β | 8K / 64 ms |
| Write Recovery Time | β | [DATA_NEEDED: tWR] |
| Row Cycle Time | β | [DATA_NEEDED: tRC] |
| Row Address Strobe to Column Address Strobe Delay | β | [DATA_NEEDED: tRCD] |
| Row Precharge Time | β | [DATA_NEEDED: tRP] |
| Active to Precharge Time | β | [DATA_NEEDED: tRAS] |