K4RAH086VB-BCWM vs K4RAH165VB-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VB-BCWM by Samsung Electronics and K4RAH165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VB-BCWM | K4RAH165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.55 | $9.92 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Memory Size | 16 Gb | 16 Gb |
| Organization | 2G x 8 | — |
| Data Rate | 5600 Mbps | — |
| Supply Voltage | 1.1 V | 1.1 V |
| Interface | DDR5 (parallel) | — |
| Package | FBGA-82 | FBGA-106 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | DDR5 |
| Speed Grade | BCWM | — |
| Operating Temperature | Commercial temperature range (per datasheet) | 0C to +85C |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS Status | Compliant | Compliant |
| Lifecycle Status | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |