K4RAH086VB-BIQK vs H5CG48MEBDX014N Comparison

Detailed side-by-side comparison of K4RAH086VB-BIQK by Samsung Electronics and H5CG48MEBDX014N by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4RAH086VB-BIQK K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK - DDR5 16Gb 4800Mbps SDRAM | Samsung

K4RAH086VB-BIQK ✓ Active
SK hynix
H5CG48MEBDX014N H5CG48MEBDX014N - DDR5 16Gb 4800Mbps SDRAM | SK Hynix

H5CG48MEBDX014N - DDR5 16Gb 4800Mbps SDRAM | SK Hynix

H5CG48MEBDX014N ✓ Active

Specification Comparison

Parameter K4RAH086VB-BIQK H5CG48MEBDX014N
Brand Samsung Electronics SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.25 $41.68
Memory Type DDR5 SDRAM DDR5 SDRAM
Density 16 Gb 16 Gbit
Organization 2G x 8 2G x 8
Data Rate 4800 Mbps/pin 4800 Mbps
Core Supply Voltage 1.1 V (nominal) —
Package 82FBGA FBGA-82 (11 x 10 mm)
Configuration X8 —
Speed Grade BIQK (-BIQK bin) —
ECC On-die ECC (DDR5 standard) —
Interface DDR5 (CA reduced pin count) —
Burst Length 16 / 32 —
Operating Mode DLL enabled —
RoHS Status Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) Compliant
Operating Temperature [DATA_NEEDED: operating temperature range] 0C to +95C
CAS Latency [DATA_NEEDED: CAS latency (CL)] —
Refresh [DATA_NEEDED: refresh rate specification] —
MSL Level [DATA_NEEDED: moisture sensitivity level] —
Supply Voltage — 1.1 V
Row Address — 12 bits
Column Address — 9 bits
Die Generation — M-die
Mounting Type — Surface Mount
Interface Type — Parallel, DDR5
Memory Class — Synchronous DRAM
Speed Class — DDR5-4800 (PC5)

Datasheets & Resources

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