K4RAH086VB-BIQK vs H5CG48MEBDX014N 对比
详细并排对比 K4RAH086VB-BIQK 出自 Samsung Electronics 和 H5CG48MEBDX014N 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH086VB-BIQK | H5CG48MEBDX014N |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.25 | $41.68 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 4800 Mbps/pin | 4800 Mbps |
| Core Supply Voltage | 1.1 V (nominal) | — |
| 封装 | 82FBGA | FBGA-82 (11 x 10 mm) |
| Configuration | X8 | — |
| Speed Grade | BIQK (-BIQK bin) | — |
| ECC | On-die ECC (DDR5 standard) | — |
| 接口 | DDR5 (CA reduced pin count) | — |
| Burst Length | 16 / 32 | — |
| Operating Mode | DLL enabled | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) | Compliant |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| CAS 延迟 | [DATA_NEEDED: CAS latency (CL)] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | — |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| 电源电压 | — | 1.1 V |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| 安装类型 | — | Surface Mount |
| 接口类型 | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |