K4RAH086VP-BCWM vs K4RAH086VE-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VP-BCWM by Samsung Electronics and K4RAH086VE-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VE-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung Electronics
K4RAH086VE-BCWM ✓ ActiveSpecification Comparison
| Parameter | K4RAH086VP-BCWM | K4RAH086VE-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $7.60 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Memory Organization | 2G x 8 | — |
| Data Rate | 5600 Mbps/pin | 5600 Mbps |
| Supply Voltage | 1.1 V | — |
| Interface | Parallel | — |
| Technology | DRAM DDR5 | — |
| Memory Format | DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| Package | [DATA_NEEDED: exact FBGA package code and body size] | 82-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tray | — |
| Application Segment | Industrial | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Lifecycle Status | Active | Mass Production |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 16 Gb |
| Organization | — | 2G x 8 |
| Supply Voltage (VDD) | — | 1.1 V |
| Generation | — | DDR5 |
| Bank Groups | — | [DATA_NEEDED: bank group count] |
| CAS Latency | — | [DATA_NEEDED: CL at 5600 Mbps] |
| VDDQ Voltage | — | [DATA_NEEDED: VDDQ value] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| Manufacturer | — | Samsung Electronics |