K6F3216U6M-EF70T vs K6X1008C2D-TF55 Comparison
Detailed side-by-side comparison of K6F3216U6M-EF70T by Samsung Electronics and K6X1008C2D-TF55 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ End of LifeSpecification Comparison
| Parameter | K6F3216U6M-EF70T | K6X1008C2D-TF55 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.10 | $2.35 |
| Memory Type | SRAM - Asynchronous | SRAM - Asynchronous |
| Memory Size | 32 Mbit | 1 Mbit |
| Organization | 2M x 16 | 128K x 8 |
| Supply Voltage | 3 V | — |
| Access Time | 55 ns | — |
| Interface | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Low Power Full CMOS |
| Package | 55-TFBGA (7.5 x 12 mm) | 32-TSOP REVERSE |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| RoHS Status | NO (per third-party listing) | RoHS: Yes (per distributor listing) |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | — |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current | — | 35 mA |
| Speed Options | — | 55 ns, 70 ns |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Memory Format | — | Volatile (SRAM) |
| Clock Frequency | — | N/A (asynchronous) |