K6F3216U6M-EF70T vs K6X1008C2D-TF55 对比
详细并排对比 K6F3216U6M-EF70T 出自 Samsung Electronics 和 K6X1008C2D-TF55 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K6F3216U6M-EF70T | K6X1008C2D-TF55 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.10 | $2.35 |
| 存储器类型 | SRAM - Asynchronous | SRAM - Asynchronous |
| 存储容量 | 32 Mbit | 1 Mbit |
| 存储组织 | 2M x 16 | 128K x 8 |
| 电源电压 | 3 V | — |
| Access Time | 55 ns | — |
| 接口 | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Low Power Full CMOS |
| 封装 | 55-TFBGA (7.5 x 12 mm) | 32-TSOP REVERSE |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| RoHS 状态 | NO (per third-party listing) | RoHS: Yes (per distributor listing) |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | — |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Operating Current | — | 35 mA |
| Speed Options | — | 55 ns, 70 ns |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Memory Format | — | Volatile (SRAM) |
| Clock Frequency | — | N/A (asynchronous) |