K6X0808C1D-BF70 vs K6X0808C1D-BF55 Comparison
Detailed side-by-side comparison of K6X0808C1D-BF70 by Samsung Electronics and K6X0808C1D-BF55 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-BF70 | K6X0808C1D-BF55 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $1.85 |
| Memory Type | Asynchronous SRAM (CMOS) | Asynchronous SRAM |
| Density | 256 Kbit | — |
| Organization | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 55 ns |
| Interface | Parallel | Parallel |
| Technology | CMOS | CMOS |
| Package | 28-SOP (PDSO28) | 28-SOP |
| Mounting Type | Surface Mount | Surface Mount |
| Supply Voltage | [DATA_NEEDED: Supply Voltage] | 5 V |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Operating Temperature | 0C to +70C (commercial grade, BF suffix) | [DATA_NEEDED: operating temperature range] |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | unknown |
| Address Bus | A0-A14 (15 address lines) | — |
| Memory Size | — | 256 Kbit |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |
| Memory Format | — | SRAM |
| Clock Frequency | — | N/A (asynchronous) |
| Refresh | — | Not required (static memory) |