K9UMGB8U7M vs K9PDG08U5M Comparison
Detailed side-by-side comparison of K9UMGB8U7M by Samsung Electronics and K9PDG08U5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics
K9UMGB8U7M ✓ ActiveSamsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ End of LifeSpecification Comparison
| Parameter | K9UMGB8U7M | K9PDG08U5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $4.20 |
| Memory Type | NAND Flash | NAND Flash (SLC) |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 4 Gbit |
| Organization | [DATA_NEEDED: Memory Organization] | x8 (multiplexed I/O) |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | — |
| Supply Voltage | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: supply voltage range] |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: program/erase cycles] |
| Operating Temperature | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Package | [DATA_NEEDED: Package Type] | TSOP1-48 |
| Mounting Type | [DATA_NEEDED: Mounting Type] | Surface Mount |
| RoHS Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |