K9UMGB8U7M vs K9PDG08U5M 对比
详细并排对比 K9UMGB8U7M 出自 Samsung Electronics 和 K9PDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9UMGB8U7M | K9PDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $4.20 |
| 存储器类型 | NAND Flash | NAND Flash (SLC) |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 4 Gbit |
| 存储组织 | [DATA_NEEDED: Memory Organization] | x8 (multiplexed I/O) |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | — |
| 电源电压 | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: supply voltage range] |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: program/erase cycles] |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| 封装 | [DATA_NEEDED: Package Type] | TSOP1-48 |
| 安装类型 | [DATA_NEEDED: Mounting Type] | Surface Mount |
| RoHS 状态 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |