K9UMGB8U7M vs K9PDG08U5M 비교
다음의 상세 나란히 비교: K9UMGB8U7M 제조: Samsung Electronics 및 K9PDG08U5M 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | K9UMGB8U7M | K9PDG08U5M |
|---|---|---|
| 브랜드 | Samsung Electronics | Samsung Electronics |
| 카테고리 | Memory ICs | EEPROM |
| 수명 주기 상태 | 활성 | 수명 종료 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $4.20 |
| 메모리 유형 | NAND Flash | NAND Flash (SLC) |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 4 Gbit |
| 메모리 구성 | [DATA_NEEDED: Memory Organization] | x8 (multiplexed I/O) |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | — |
| 공급 전압 | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: supply voltage range] |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | [DATA_NEEDED: program/erase cycles] |
| 동작 온도 | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| 패키지 | [DATA_NEEDED: Package Type] | TSOP1-48 |
| 실장 유형 | [DATA_NEEDED: Mounting Type] | Surface Mount |
| RoHS 상태 | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |